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| LH 3364 3 mm (T1) LED, Diffused Super-Bright, Hyper-Red GaAIAs-LED Besondere Merkmale q q q q q q eingefarbtes, diffuses Gehause Doppel-Heterostruktur in GaAlAs Technologie besonders hohe Lichtstarke Lotspiee mit Aufsetzebene gegurtet lieferbar Storimpulsfest nach DIN 40839 VEX06711 Features q q q q q q colored, diffused package double heterojunction in GaAIAs technology especially high luminous intensity solder leads with stand-off available taped on reel load dump resistant acc. to DIN 40839 Typ Type Emissionsfarbe Color of Emission Gehausefarbe Color of Package Lichtstarke Luminous Intensity IF = 10 mA IV (mcd) 10 ... 80 16 ... 32 25 ... 50 16 ... 125 Bestellnummer Ordering Code LH 3364-LP LH 3364-M LH 3364-N LH 3364-MQ hyper-red red diffused Q62703-Q3202 Q62703-Q3203 Q62703-Q2798 Q62703-Q3201 Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0. Luminous intensity ratio in one packaging unit IV max / IV min 2.0. Semiconductor Group 1 11.96 LH 3364 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspannung Reverse voltage Verlustleistung Power dissipation TA 25 C Warmewiderstand Thermal resistance Sperrschicht / Luft Junction / air Symbol Symbol Werte Values - 55 ... + 100 - 55 ... + 100 + 100 40 0.5 Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot 3 120 V mW Rth JA 400 K/W Semiconductor Group 2 LH 3364 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 20 mA Dominantwellenlange Dominant wavelength IF = 20 mA Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 20 mA Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV Durchlaspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 3 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tP = 10 s, RL = 50 Symbol Symbol (typ.) peak (typ.) (typ.) dom (typ.) (typ.) (typ.) 2 (typ.) VF (max.) VF (typ.) IR (max.) IR (typ.) C0 Werte Values 660 Einheit Unit nm 645 nm 22 nm 45 1.75 2.6 0.01 10 25 Grad deg. V V A A pF (typ.) tr (typ.) tf 140 110 ns ns Semiconductor Group 3 LH 3364 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 20 mA Relative spectral emission V () = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel = f () Radiation characteristic Semiconductor Group 4 LH 3364 Durchlastrom IF = f (VF) Forward current TA = 25 C Relative Lichtstarke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 C Zulassige Impulsbelastbarkeit IF = f (tP) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) Semiconductor Group 5 LH 3364 Wellenlange der Strahlung peak = f (TA) Wavelength at peak emission IF = 20 mA Dominantwellenlange dom = f (TA) Dominant wavelength IF = 20 mA Durchlaspannung VF = f (TA) Forward voltage IF = 10 mA Relative Lichtstarke IV/IV(25 C) = f (TA) Relative luminous intensity IF = 10 mA Semiconductor Group 6 LH 3364 Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) Anodenkennzeichnung: Anode mark: Kurzerer Lotspie Short solder lead Semiconductor Group 7 GEX06717 |
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